Discussion and Articles on Silicon Carbide Technologies
, by Daniel Rehe, 1 min reading time
The main Applications are currently Sic Shottky Diodes, Sic Mosfets, and High Speed IGBTS
Silicone Carbide is re-inventing the Power Electronics Industry by allowing space saving of up to 30% from traditional Silicon power modules. The main Applications are currently Sic Shottky Barrier Diodes, Sic Mosfets, and High Speed IGBTS
SanRex silicon carbide MOSFET modules offer higher speed and lower switching losses than conventional silicon IGBTs and significantly lower ON resistance, even at high temperatures. The modules offer a high Vgs(th) to reduce malfunctions. The new, durable in a 94 x 29.8 x 14mm package has top and bottom die soldering and transfer mould technologies. Call 01793 784389 and talk to one of our technical sales team.
Advantages:
- Low loss even at high temperature
- High Vgs(th) to reduce malfunctions
- Compact and high power
Applications:
- Welding and plasma cutting machines
- Power supplies and inverters
- Motor drives
Link to Sanrex Sic Mosfet datasheet
SiC MOSFET Modules
| Id | Vdss | Vgs(th) | Rds(on) Vgs=20V | Vsd Vgs=-5V |
|---|---|---|---|---|
| 100A | 1200V | 4.5V | 9mΩ | 2.7V |
| 150A | 1200V | 4.5V | 6mΩ | 2.7V |
| 100A | 1700V | 4.5V | 12mΩ | TBC |
| 150A | 1700V | 4.5V | 9mΩ | TBC |
Silicon Carbide Schottky Barrier Diode Modules
| If | Vrrm | Vf |
|---|---|---|
| 100A | 1200V | 1.65V |
| 150A | 1200V | 1.65V |